 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| NTD3055-150 Power MOSFET 9.0 A, 60 V N-Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features http://onsemi.com * Pb-Free Packages are Available Typical Applications 9.0 AMPERES, 60 VOLTS RDS(on) = 122 mW (Typ) N-Channel D * * * * Power Supplies Converters Power Motor Controls Bridge Circuits G MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Drain-to-Source Voltage Drain-to-Gate Voltage (RGS = 10 MW) Gate-to-Source Voltage - Continuous - Non-repetitive (tpv10 ms) Drain Current - Continuous @ TA = 25C - Continuous @ TA = 100C - Single Pulse (tpv10 ms) Total Power Dissipation @ TA = 25C Derate above 25C Total Power Dissipation @ TA = 25C (Note 1) Total Power Dissipation @ TA = 25C (Note 2) Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25C (VDD = 25 Vdc, VGS = 10 Vdc, L = 1.0 mH, IL(pk) = 7.75 A, VDS = 60 Vdc) Thermal Resistance - Junction-to-Case - Junction-to-Ambient (Note 1) - Junction-to-Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VDGR VGS VGS ID ID IDM PD Value 60 60 "20 "30 9.0 3.0 27 28.8 0.19 2.1 1.5 -55 to 175 30 Unit Vdc Vdc Vdc S MARKING DIAGRAMS 4 Drain DPAK CASE 369C STYLE 2 "SURFACE MOUNT" 4 AYW 3150 4 Drain 4 AYW 3150 DPAK-3 CASE 369D STYLE 2 "STRAIGHT LEAD" 1 2 3 123 Gate Drain Source Adc Apk W W/C W W C mJ 12 3 2 1 3 Drain Gate Source TJ, Tstg EAS C/W RqJC RqJA RqJA TL 5.2 71.4 100 260 C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. When surface mounted to an FR4 board using 0.5 sq in pad size. 2. When surface mounted to an FR4 board using minimum recommended pad size. 3150 A Y W Device Code = Assembly Location = Year = Work Week ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. (c) Semiconductor Components Industries, LLC, 2004 1 August, 2004 - Rev. 4 Publication Order Number: NTD3055-150/D NTD3055-150 ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (Note 3) (VGS = 0 Vdc, ID = 250 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150C) Gate-Body Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Note 3) (VDS = VGS, ID = 250 mAdc) Threshold Temperature Coefficient (Negative) Static Drain-to-Source On-Resistance (Note 3) (VGS = 10 Vdc, ID = 4.5 Adc) Static Drain-to-Source On-Voltage (Note 3) (VGS = 10 Vdc, ID = 9.0 Adc) (VGS = 10 Vdc, ID = 4.5 Adc, TJ = 150C) Forward Transconductance (Note 3) (VDS = 7.0 Vdc, ID = 6.0 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge (VDS = 48 Vdc, ID = 9.0 Adc, VGS = 10 Vdc) (Note 3) SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage (IS = 9.0 Adc, VGS = 0 Vdc) (Note 3) (IS = 19 Adc, VGS = 0 Vdc, TJ = 150C) (IS = 9.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) (Note 3) Reverse Recovery Stored Charge 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperatures. VSD - - - - - - 0.98 0.86 28.9 21.6 7.3 0.036 1.20 - - - - - mC Vdc (VDD = 48 Vdc, ID = 9.0 Adc, VGS = 10 Vdc, Vdc RG = 9.1 W) ( ) (Note 3) ) td(on) tr td(off) tf QT Q1 Q2 - - - - - - - 11.2 37.1 12.2 23 7.1 1.7 3.5 25 80 25 50 15 - - nC ns (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss Coss Crss - - - 200 70 26 280 100 40 pF VGS(th) 2.0 - RDS(on) - VDS(on) - - gFS - 1.4 1.1 5.4 1.9 - - mhos 122 150 Vdc 3.0 6.4 4.0 - Vdc mV/C mW V(BR)DSS 60 - IDSS - - IGSS - - - - 1.0 10 100 nAdc - 70.2 - - Vdc mV/C mAdc Symbol Min Typ Max Unit Reverse Recovery Time trr ta tb QRR ns http://onsemi.com 2 NTD3055-150 20 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) VGS = 10 V 16 VGS = 9 V VGS = 8 V VGS = 7 V 20 VDS 10 V 16 12 12 8 VGS = 6 V 8 TJ = 25C TJ = 100C 0 TJ = -55C 3 4 5 6 7 8 9 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 4 0 0 1 2 3 4 5 VGS = 5 V 4 6 7 8 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.5 VGS = 10 V 0.4 TJ = 100C 0.5 VGS = 15 V 0.4 0.3 0.3 TJ = 100C 0.2 TJ = 25C 0.1 0 0 4 8 12 16 20 24 ID, DRAIN CURRENT (AMPS) TJ = -55C 0.2 TJ = 25C TJ = -55C 0.1 0 0 4 8 12 16 20 24 ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance versus Gate-To-Source Voltage RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 -50 -25 1 0 25 50 75 100 125 150 175 0 ID = 4.5 A VGS = 10 V IDSS, LEAKAGE (nA) 100 1000 Figure 4. On-Resistance versus Drain Current and Gate Voltage VGS = 0 V TJ = 150C TJ = 125C 10 TJ = 100C 10 20 30 40 50 60 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-To-Source Leakage Current versus Voltage http://onsemi.com 3 NTD3055-150 VDS = 0 V Ciss VGS = 0 V VGS, GATE-TO-SOURCE VOLTAGE (V) 560 480 C, CAPACITANCE (pF) 400 320 240 160 Coss 80 0 10 5 VGS 0 VDS 5 Crss 10 15 20 25 Crss Ciss 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 Qg, TOTAL GATE CHARGE (nC) ID = 9 A TJ = 25C QT TJ = 25C Q1 Q2 VGS GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V) Figure 7. Capacitance Variation Figure 8. Gate-to-Source and Drain-to-Source Voltage versus Total Charge 100 IS, SOURCE CURRENT (AMPS) VDS = 30 V ID = 9 A VGS = 10 V t, TIME (ns) tr 10 VGS = 0 V TJ = 25C 8 6 tf td(off) td(on) 10 1 10 RG, GATE RESISTANCE (W) 100 4 2 0 0.6 0.68 0.76 0.84 0.92 1 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation versus Gate Resistance EAS, SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) Figure 10. Diode Forward Voltage versus Current 100 ID, DRAIN CURRENT (AMPS) VGS = 20 V SINGLE PULSE TC = 25C 10 10 ms 100 ms 1 ms 10 ms RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 1 10 32 ID = 7.75 A 24 16 1 8 0.1 dc 100 0 25 50 75 100 125 150 175 TJ, STARTING JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature http://onsemi.com 4 NTD3055-150 10 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.2 1 0.1 0.05 0.01 SINGLE PULSE 0.1 0.00001 0.0001 0.001 0.01 t, TIME (s) 0.1 1 10 P(pk) t2 DUTY CYCLE, D = t1/t2 t1 Figure 13. Thermal Response ORDERING INFORMATION Device NTD3055-150 NTD3055-150G NTD3055-150-1 NTD3055-150-1G NTD3055-150T4 NTD3055-150T4G Package DPAK DPAK (Pb-Free) DPAK-3 DPAK-3 (Pb-Free) DPAK DPAK (Pb-Free) Shipping 75 Units/Rail 75 Units/Rail 75 Units/Rail 75 Units/Rail 2500 Tape & Reel 2500 Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 NTD3055-150 PACKAGE DIMENSIONS DPAK CASE 369C-01 ISSUE O -T- B V R 4 SEATING PLANE C E DIM A B C D E F G H J K L R S U V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 --- 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 --- 0.89 1.27 3.93 --- A S 1 2 3 Z U K F L D G 2 PL J H 0.13 (0.005) M T STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 3.0 0.118 SCALE 3:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 NTD3055-150 PACKAGE DIMENSIONS DPAK-3 CASE 369D-01 ISSUE B C E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 --- B V R 4 Z A 3 S -T- SEATING PLANE 1 2 K F D G 3 PL J H 0.13 (0.005) M DIM A B C D E F G H J K R S V Z T STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN http://onsemi.com 7 NTD3055-150 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 8 NTD3055-150/D |
Price & Availability of NTD3055-150T4G
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |